کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1498617 | 1510917 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and electrical properties of phosphorous-doped p-type ZnSxO1−x film grown by co-sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structural and electrical properties of phosphorous-doped p-type ZnSxO1−x film grown by co-sputtering Structural and electrical properties of phosphorous-doped p-type ZnSxO1−x film grown by co-sputtering](/preview/png/1498617.png)
چکیده انگلیسی
We report on the structural and electrical properties of phosphorous-doped ZnSxO1−x films grown by radiofrequency magnetron sputtering. The band gap decreased with increasing sulfur composition in phosphorus-doped ZnSxO1−x films because of the band bowing effect. The conductivity of phosphorus-doped ZnSxO1−x films changed from n-type to p-type, and the p-type doping efficiency of phosphorus in ZnO was increased as the sulfur content in phosphorus-doped ZnSxO1−x was increased.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Scripta Materialia - Volumes 84–85, August 2014, Pages 39–42
Journal: Scripta Materialia - Volumes 84–85, August 2014, Pages 39–42
نویسندگان
Jang-Won Kang, Yong-Seok Choi, Byeong-Hyeok Kim, Na-Yeong Kim, C.W. Tu, Seong-Ju Park,