Structural and electrical properties of phosphorous-doped p-type ZnSxO1−x film grown by co-sputtering

We report on the structural and electrical properties of phosphorous-doped ZnSxO1−x films grown by radiofrequency magnetron sputtering. The band gap decreased with increasing sulfur composition in phosphorus-doped ZnSxO1−x films because of the band bowing effect. The conductivity of phosphorus-doped ZnSxO1−x films changed from n-type to p-type, and the p-type doping efficiency of phosphorus in ZnO was increased as the sulfur content in phosphorus-doped ZnSxO1−x was increased.