High thermoelectric figure of merit of Mg2Si0.55Sn0.4Ge0.05 materials doped with Bi and Sb

Thermoelectric properties of new Bi- and Sb-doped Mg2Si0.55Sn0.4Ge0.05 compounds prepared by powder methods were studied in the temperature range 300–823 K. The materials exhibited compositional inhomogeneites consisting of Sn-rich and Sn-poor areas. Doping with Bi or Sb had a very strong influence on the thermoelectric properties. A high figure of merit was obtained, with a value ∼1.4 for Bi members and ∼1.2 for Sb members at high temperatures. These values are the highest reported on this system.

High figure-of-merit was obtained on doped Mg2Si0.55Sn0.4Ge0.05 compounds at high temperatures. These values are the highest reported on this system.Figure optionsDownload high-quality image (105 K)Download as PowerPoint slide