کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1498718 | 993275 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High thermoelectric figure of merit of Mg2Si0.55Sn0.4Ge0.05 materials doped with Bi and Sb
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thermoelectric properties of new Bi- and Sb-doped Mg2Si0.55Sn0.4Ge0.05 compounds prepared by powder methods were studied in the temperature range 300–823 K. The materials exhibited compositional inhomogeneites consisting of Sn-rich and Sn-poor areas. Doping with Bi or Sb had a very strong influence on the thermoelectric properties. A high figure of merit was obtained, with a value ∼1.4 for Bi members and ∼1.2 for Sb members at high temperatures. These values are the highest reported on this system.
High figure-of-merit was obtained on doped Mg2Si0.55Sn0.4Ge0.05 compounds at high temperatures. These values are the highest reported on this system.Figure optionsDownload high-quality image (105 K)Download as PowerPoint slide
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Scripta Materialia - Volume 69, Issue 8, October 2013, Pages 606–609
Journal: Scripta Materialia - Volume 69, Issue 8, October 2013, Pages 606–609
نویسندگان
A.U. Khan, N. Vlachos, Th. Kyratsi,