The influence of Cu–Nb interfaces on local vacancy concentrations in Cu

The sink strength of Cu–Nb interfaces was investigated by measuring the steady-state vacancy concentration profile adjacent to Cu–Nb interfaces during 1.8 MeV Kr+ irradiation. Broadening of dilute nanoscale Au tracer layers in Cu quantified position-dependent values for radiation-enhanced diffusivity and, accordingly, vacancy concentration. The measured vacancy profile corresponds to results calculated from a steady-state kinetic rate equation that assumes perfect sink efficiency at the Cu–Nb interface, indicating that it behaves like an ideal sink for vacancies in Cu.