کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1498947 993286 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
In situ growth and ab initio optical characterizations of amorphous Ga3Se4 thin film: A new chalcogenide compound semiconductor thin film
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
In situ growth and ab initio optical characterizations of amorphous Ga3Se4 thin film: A new chalcogenide compound semiconductor thin film
چکیده انگلیسی

This paper reports the first systematic study of the structural and optical characterization of Ga3Se4 thin film. Powder X-ray diffractometery analysis revealed that the films are amorphous. Optical reflection and transmittance measurements have been done by UV–visible–near-infrared spectrophotometry, and the values of various optical constants, such as the lower cut-off wavelength (550 nm), optical band gap (2.14 eV), dispersive energy (6.75 eV), oscillator energy (2.86 eV), static refractive index (1.83) and static dielectric constant (3.35), have been estimated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Scripta Materialia - Volume 69, Issue 5, September 2013, Pages 381–384
نویسندگان
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