کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1499707 993318 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thickness effects on the lithiation of amorphous silicon thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Thickness effects on the lithiation of amorphous silicon thin films
چکیده انگلیسی

The lithiation of thin film Si was investigated in an electrochemical cell, using in situ wafer curvature to monitor the evolution of in-plane stresses. Increasing the initial film thickness from 50 to 250 nm led to decreases in both the nominal flow stress and the Li capacity. These observations are consistent with relatively slow Li diffusion. The corresponding concentration gradients should have a substantial effect on the deformation and viscous flow that occur in lithiated Si.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Scripta Materialia - Volume 64, Issue 4, February 2011, Pages 307–310
نویسندگان
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