کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1499815 993322 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Formation of shallow junctions in gallium and phosphorus compensated silicon for cell performance improvement
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Formation of shallow junctions in gallium and phosphorus compensated silicon for cell performance improvement
چکیده انگلیسی
Solar cells have been fabricated from gallium and phosphorus compensated Czochralski silicon wafer. It is found that these solar cells have shallower n+p junctions, compared to those based on conventional silicon. The cell efficiencies under 1 sun illumination are on average 0.2% higher than those of conventional solar cells. This improvement is associated with the better spectral response in the short-wavelength range, due to the formation of shallower junctions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Scripta Materialia - Volume 65, Issue 10, November 2011, Pages 871-874
نویسندگان
, , , ,