کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1500003 | 993329 | 2011 | 4 صفحه PDF | دانلود رایگان |
Undoped and Ga-doped ZnS nanowires comprising hexagonal platelets with high carrier concentrations are derived using different substrates in the evaporation and condensation process. Cathodoluminescence results show that the dominant emission switches from near-band-edge emissions for the undoped ZnS nanowires to defect emissions for Ga-doped ZnS nanowires. The current–voltage results of the Ga-doped ZnS nanowires indicate low resistivity and unusual metal-like electron conduction following electron–phonon interactions at above 50 K, in contrast to the semiconductor behavior of the undoped ZnS nanowires.
Research highlights
► The Ga-doped nanowires can be fabricated by evaporation and condensation process.
► The Ga-doped ZnS nanowires are composed of hexagonal platelets.
► The defect-related emissions are dominant in the Ga-doped ZnS nanowires.
► The R–T plot of the Ga-doped ZnS nanowire shows metal-like conduction at above 50 K.
► The metal-like conduction behavior is caused by electron–phonon interactions.
Journal: Scripta Materialia - Volume 64, Issue 8, April 2011, Pages 761–764