Highly selective diamond and β-SiC crystal formation at increased atomic hydrogen concentration: A route for synthesis of high-quality and patterned hybrid diamond/β-SiC composite film

Utilizing a high atomic hydrogen concentration, highly selective formation of micrometer-sized diamond and β-SiC crystals is achieved in a microwave plasma chemical vapour deposition process. The high atomic hydrogen concentration, generated by a high microwave power density, hinders secondary heterogeneous nucleation and therefore enhances the selectivity of CH3 and SiH3 deposition onto diamond and β-SiC crystals, respectively. Based on experimental observation, an H-induced selective growth model is proposed that explains the mechanisms.

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