Near infrared photodetector based on polymer and indium nitride nanorod organic/inorganic hybrids

We propose a nanostructured near infrared photodetector based on indium nitride (InN) nanorod/poly(3-hexylthiophene) hybrids. The current–voltage characteristic of the hybrid device demonstrates the typical p–n heterojunction diode behavior, consisting of p-type polymer and n-type InN nanorods. The device shows a photoresponse range of 900–1260 nm under various reverse biases. An external quantum efficiency of 3.4% at 900 nm operated at −10 V reverse bias was obtained, which is comparable with devices based on lead sulfide and lead selenide hybrid systems.