Surface oxidation of electromagnetically levitated molten silicon under a condition of oxygen-supersaturation

Surface oxidation of a molten silicon droplet levitated under undercooled and oxygen-supersaturated conditions was observed. After the melt surface was covered with a SiO2 film, temperature fluctuation took place; this mainly corresponds to two competing phenomena, i.e. the exothermic reaction of SiO2 formation and the endothermic reaction of SiO evaporation, which enhances the undercooling.