کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1503358 993468 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Single adatom site exchange during the Ge growth on group V element covered Si(0 0 1)
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Single adatom site exchange during the Ge growth on group V element covered Si(0 0 1)
چکیده انگلیسی

The site exchange between Ge and surfactant atoms in the growth of Ge on the group V element-covered Si(0 0 1) has been studied using first-principles total energy calculations. On the Bi-covered Si(0 0 1) and the As-covered Si(0 0 1), a single adatom site exchange process can occur energetically, but with different pathways. The energy barriers for the single adatom site exchange are very small. The site exchange can therefore occur very easily. This will suppress the Ge diffusion, and favors the layer-by-layer growth mode.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Scripta Materialia - Volume 56, Issue 2, January 2007, Pages 113–116
نویسندگان
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