Electromigration effect on solder bump in Cu/Sn–3Ag–0.5Cu/Cu system

The electromigration effect on solder bump and interfacial reactions in the Cu/Sn–3Ag–0.5Cu/Cu flip chip joint was investigated at 453 K with 10 kA/cm2. Cu was transported towards the anode and avoid nucleated at the highest current density point near the cathode. The void nucleated at the Sn/Cu6Sn5 interface and grew along the cathode side. It was observed that the unique solder bump deformation towards the cathode started in the early stage of the electromigration test.