Growth of void-free 3C-SiC films by modified two-step carbonization methods

Highly preferred orientation 3C-SiC films were deposited on Si (111) substrates by a modified two-step carbonization method. The crystal quality of SiC films were examined by XRD. To evaluate the effect of the introducing of silane during carbonization, cross-sectional SEM was carried out. Results indicated that the introducing of silane during carbonization is effective to prevent the out-diffusion of silicon atoms from silicon substrates. And by adjusting the carbonization conditions, void-free 3C-SiC films were obtained. XPS results demonstrated that the prepared 3C-SiC films were corresponding with the stoichiometric ratio.

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► Modified two-step carbonization method was proposed.
► A little SiH4 was introduced during the second step of carbonization.
► The introducing of SiH4 during carbonization is crucial to prevent the out-diffusion of silicon.
► By adjusting the carbonization conditions, void-free single crystal 3C-SiC films were obtained.