Electrical and magneto resistance studies of bulk Ga1−xNixSb ternary alloys

Ternary semiconductor alloys of Ga1−xNixSb were grown with different Ni concentrations by vertical Bridgman method with well-defined temperature profile for possible applications as Diluted Magnetic Semiconductor (DMS). The electrical properties of the grown samples were studied in the temperature range 78–300 K by Hall effect measurements using van der Pauw configurations. The positive sign of Hall coefficient confirmed p-type conductivity of the grown samples. The results of the measurements at 300 K indicate that resistivity, Hall coefficient and hole mobility decrease while the hole concentration increases with the increasing Ni concentrations from 0.5% to 2.8% in Ga1−xNixSb ternary alloys. The magneto resistance studies at different magnetic fields (≤10 kG) and in the temperature range 78–300 K showed positive magneto resistance and the Arrott plots revealed very low Curie temperature of the material (<78 K).

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