کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1505755 993772 2010 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Calculation of direct and indirect excitons in GaAs–Ga1−xAlxAs coupled double quantum wells: Electric and magnetic fields and hydrostatic pressure effects
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Calculation of direct and indirect excitons in GaAs–Ga1−xAlxAs coupled double quantum wells: Electric and magnetic fields and hydrostatic pressure effects
چکیده انگلیسی

A study of the electronic and optical properties of coupled double quantum wells is presented. Within the framework of the effective mass and parabolic-band approximations we have calculated the electron–hole and photoluminescence energy transitions under simultaneous effects of electric and magnetic fields. For that purpose, a variational procedure has been used, taking into account the effect of hydrostatic pressure. The electric field is taken to be oriented along the growth direction of the heterostructure whereas for the magnetic field both in-plane and in-growth directions have been considered. The results show that hydrostatic pressure is a useful tool to tune the direct and indirect exciton transitions in such heterostructures. It is shown that the photoluminescence peak energy transitions strongly depend on the external fields and hydrostatic pressure studied here. Furthermore, our numerical outcome is in good agreement with previous experimental findings at zero pressure in double quantum wells under applied electric and magnetic fields.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Sciences - Volume 12, Issue 2, February 2010, Pages 210–221
نویسندگان
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