Structural and electrical characterization of boron-containing diamond-like carbon films deposited by femtosecond pulsed laser ablation

The present study investigates the influence of the incorporation of boron in Diamond-Like Carbon (DLC) films deposited by femtosecond laser ablation, on the structure and electrical properties of the coatings within the temperature range 70–300 K. Doping with boron has been performed by ablating alternatively graphite and boron targets. The film structure and composition have been highlighted by coupling Atomic Force Microscopy (AFM), Scanning Electron Microscopy equipped with a field emission gun (SEM-FEG) and High Resolution Transmission Electron Microscopy (HRTEM). Boron dilution ranges between 2 and 8% and appears as nanometer size clusters embedded in the DLC matrix. Typical resistivity values are 100 W cm for pure a-C films, down to few W cm for a-C:B films at room temperature. The resistance decreases exponentially when the temperature increases in the range 70–300 K. The results are discussed considering the classical model of hopping conduction in thin films. Some coatings show temperature coefficients of resistance (TCR) as high as 3.85%. TCRs decrease when the doping increases. Such high values of TCR may have interests in the use of these films as thermometer elements in micro and nanodevices.

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