Dielectric and ferroelectric properties of highly (100)-oriented (Na0.5Bi0.5)0.94Ba0.06TiO3 thin films grown on LaNiO3/γ-Al2O3/Si substrates by chemical solution deposition

A (Na0.5Bi0.5)0.94Ba0.06TiO3 chemical solution was prepared by using barium acetate, nitrate of sodium, nitrate of bismuth, and Ti-isopropoxide as raw materials. A white precipitation appeared during the preparation was analyzed to be Ba(NO3)2. We found that ethanolamine is a very effective coordinating ligand of Ba2+. A transparent and stable (Na0.5Bi0.5)0.94Ba0.06TiO3 precursor chemical solution has been achieved by using ethanolamine as a ligand of Ba2+. (Na0.5Bi0.5)0.94Ba0.06TiO3 films were grown on LaNiO3/γ-Al2O3/Si substrates. Highly (100)-oriented (Na0.5Bi0.5)0.94Ba0.06TiO3 films were obtained in this work due to lattice match growth. The dielectric, ferroelectric and insulative characteristics against applied field were studied. The conduction current shows an Ohmic conduction behavior at lower voltages and space-charge-limited behavior at higher voltages, respectively. These results indicate that, the (Na0.5Bi0.5)0.94Ba0.06TiO3 film is a promising lead-free ferroelectric film.

The (Na0.5Bi0.5)0.94Ba0.06TiO3 films deposited by our chemical solution can crystallize at lower temperature. XRD patterns of NBT-BT thin films deposited on (100)-oriented LNO electrode show that the NBT-BT film is highly (100)-oriented with pure perovskite structure when the annealing temperature is higher than 600 °C.Figure optionsDownload as PowerPoint slide