کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1515462 | 1511522 | 2015 | 30 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and optoelectronic properties of Mg substituted ZTe (Z=Zn, Cd and Hg)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Wide band gap semiconductor alloys, MgxZ1âxTe (Z=Zn, Cd and Hg), are investigated over a full range of Mg compositions (0â¤xâ¤1) using density functional theory (DFT). The variation in the lattice constant of MgxZ1âxTe is linear with the composition x, and all these alloys obey Vegrd's law. The CdTe (6.50 Ã
) and MgTe (6.44Â Ã
) are lattice matched compounds, therefore the lattice constant of MgCdTe decreases slightly with the concentration x, whereas the lattice constant also decreases for MgHgTe but increases for MgZnTe. It is due to the fact that Mg has larger size than Zn and smaller size than Cd and Hg. The band gap of these compounds are calculated using the modified Becke-Johnson (mBJ) exchange potential as LDA and GGA are not effective in producing the experimental band gap of a strongly correlated electron system. The calculated band gaps of these compounds cover the range 0-3.5Â eV and are consistent with the experimental band gaps. The band gaps exhibit nonlinear behavior or bowing effect with the change in concentration. The frequency dependent optical properties like dielectric functions, and indices of refraction of these ternary systems are also calculated and discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 83, August 2015, Pages 75-84
Journal: Journal of Physics and Chemistry of Solids - Volume 83, August 2015, Pages 75-84
نویسندگان
Imad Khan, Fazle Subhan, Iftikhar Ahmad, Zahid Ali,