Exploring electro-optic effect of impurity doped quantum dots in presence of Gaussian white noise

• Electro-optic effect (EOE) susceptibility of doped quantum dot is studied.
• The dot is subject to Gaussian white noise.
• EOE is affected by various important parameters.
• Noise influences EOE profiles noticeably.
• Findings may have technological importance.

We explore the profiles of electro-optic effect (EOE) of impurity doped quantum dots (QDs) in presence and absence of noise. We have invoked Gaussian white noise in the present study. The quantum dot is doped with Gaussian impurity. Noise has been administered to the system additively and multiplicatively. A perpendicular magnetic field acts as a confinement source and a static external electric field has been applied. The EOE profiles have been followed as a function of incident photon energy when several important parameters such as electric field strength, magnetic field strength, confinement energy, dopant location, relaxation time, Al concentration, dopant potential, and noise strength possess different values. In addition, the role of mode of application of noise (additive/multiplicative) on the EOE profiles has also been scrutinized. The EOE profiles are found to be adorned with interesting observations such as shift of peak position and maximization/minimization of peak intensity. However, the presence of noise and also the pathway of its application bring about rich variety in the features of EOE profiles through some noticeable manifestations. The observations indicate possibilities of harnessing the EOE susceptibility of doped QD systems in presence of noise.

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