کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1516398 | 1511552 | 2013 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Annealing effect on the near-band edge emission of ZnO Annealing effect on the near-band edge emission of ZnO](/preview/png/1516398.png)
ZnO thin films have been grown on the sapphire (с-Al2O3) substrates at the temperature of 250 °C by means of the direct current (DC) magnetron sputtering technique. The crystal structure and surface morphology of the deposited films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The optical transmission, reflection and luminescence spectra at 300 K were analyzed for both the as-grown and post-annealed ZnO films. Using the λ-modulation method gives the possibility to reveal the main features of the energy band structure and the nature of the radiative transitions causing the ultraviolet (UV) luminescence.
► λ-modulation method allows to reveal details of the band structure of ZnO.
► Annealing at 600–900 °C causes the appearance of intense luminescence of ZnO.
► Near band edge emission peak consists of three bands formed by local centers.
Journal: Journal of Physics and Chemistry of Solids - Volume 74, Issue 2, February 2013, Pages 291–297