کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1517357 1511582 2010 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Comprehensive study of high-Tc interface superconductivity
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Comprehensive study of high-Tc interface superconductivity
چکیده انگلیسی

Using ALL-MBE technique, we have synthesized different heterostructures consisting of an insulator La2CuO4 (I) and a metal La1.56Sr0.44CuO4 (M) layer neither of which is superconducting by itself. The M–I bilayers were superconducting with a critical temperature Tc≈30–36 K. This highly robust phenomenon is confined within 1–2 nm from the interface and is primarily caused by the redistribution of doped holes across the interface. In this paper, we present a comprehensive study of the interface superconductivity by a range of experimental techniques including transport measurements of superconducting properties.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 71, Issue 8, August 2010, Pages 1098–1104
نویسندگان
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