Keywords: B. رشد اپیتاشیال; A. Thin film; B. Epitaxial growth; D. Surface properties
مقالات ISI B. رشد اپیتاشیال (ترجمه نشده)
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Photoluminescence of CdGeP2 and (Cd,Mn)GeP2
Keywords: B. رشد اپیتاشیال; A. Magnetic materials; B. Epitaxial growth; D. Luminescence;
Strain fluctuations in BaTiO3/SrTiO3 heterostructures
Keywords: B. رشد اپیتاشیال; A. Oxides; A. Thin films; B. Epitaxial growth; C. Electron microscopy; C. X-ray diffraction;
High nitrogen composition-induced low interfacial roughness of GaAs0.978N0.022/GaAs multiple quantum wells grown through solid-source molecular beam epitaxy
Keywords: B. رشد اپیتاشیال; A. Multiple quantum wells; B. Epitaxial growth; C. Raman spectroscopy; D. Crystal structure; E. Surface properties;
Influence of stacking faults on the quality of GaN films grown on sapphire substrate using a sputtered AlN nucleation layer
Keywords: B. رشد اپیتاشیال; A. Nitrides; B. Epitaxial growth; B. Sputtering; C. TEM; D. Defects;
Enhanced ferroelectric properties in multiferroic epitaxial Ba2EuFeNb4O15 thin films grown by pulsed laser deposition
Keywords: B. رشد اپیتاشیال; A. Multiferroic; B. Epitaxial growth; C. Thin films; D. Composite;
Enhanced ferroelectric photovoltaic effect based on converging depolarization field
Keywords: B. رشد اپیتاشیال; A. Multilayers; A. Thin films; B. Epitaxial growth; C. Atomic force microscopy; D. Ferroelectricity; D. Multiferroics
Enhancement in multicolor photoresponse for quaternary capped In0.5Ga0.5As/GaAs quantum dot infrared photodetectors implanted with hydrogen ions
Keywords: B. رشد اپیتاشیال; A. Nanostructures; B. Epitaxial growth; B. Optical properties; C. Transmission electron microscopy (TEM); D. Electrical properties
High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlOx interlayer
Keywords: B. رشد اپیتاشیال; A. Amorphous materials; A. Semiconductor; B. Epitaxial growth; B. Phase equilibria
Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE
Keywords: B. رشد اپیتاشیال; A. Semiconductors; B. Epitaxial growth; C. Raman spectroscopy; C. X-ray diffraction; D. Electrical properties
Alignment nature of ZnO nanowires grown on polished and nanoscale etched lithium niobate surface through self-seeding thermal evaporation method
Keywords: B. رشد اپیتاشیال; A. Nanostructures; B. Epitaxial growth; B. Vapor deposition; B. Piezoelectricity; D. Surface properties
Anisotropic magnetoresistance in facing-target reactively sputtered epitaxial γ′-Fe4N films
Keywords: B. رشد اپیتاشیال; A. Magnetic materials; A. Nitrides; B. Epitaxial growth; D. Electrical properties
Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr0.52Ti0.48)O3 thin films on all-oxide layers buffered silicon
Keywords: B. رشد اپیتاشیال; A. Thin films; B. Epitaxial growth; B. Laser deposition; B. Piezoelectricity; D. Ferroelectricity
Spatial emission distribution of InGaN/GaN light-emitting diodes depending on the pattern structures
Keywords: B. رشد اپیتاشیال; A. Optical materials; A. Semiconductor; A. Thin films; B. Epitaxial growth; D. Optical properties
Piezoelectric non-linearity in PbSc0.5Ta0.5O3 thin films
Keywords: B. رشد اپیتاشیال; A. Thin films; B. Epitaxial growth; D. Dielectric properties; D. Ferroelectricity; D. Piezoelectricity
Synthesis and peferentially loading of nickel nanoparticle on CdS surface and its photocatalytic performance for hydrogen evolution under visible light
Keywords: B. رشد اپیتاشیال; A. Nanostructures; A. Semiconductors; B. Chemical synthesis; B. Epitaxial growth; D. Catalytic properties; D. Crystal structure
Atmospheric-pressure metal–organic vapor-phase epitaxy of GaAsBi alloys on high-index GaAs substrates
Keywords: B. رشد اپیتاشیال; A. Alloys; A. Semiconductors; B. Epitaxial growth; C. X-ray diffraction; C. Spectroscopy
Diffusion mediated agglomeration of CdS nanoparticles via Langmuir-Blodgett technique
Keywords: B. رشد اپیتاشیال; A. Nanostructures; A. Thin films; B. Epitaxial growth; C. Atomic force microscopy; D. Diffusion;
In induced reconstructions of Si(1Â 1Â 1) as superlattice matched epitaxial templates for InN growth
Keywords: B. رشد اپیتاشیال; A. Interfaces; A. Surfaces; A. Semiconductors; B. Epitaxial growth; C. X-ray diffraction; D. Crystal structure; D. Electrical properties; D. Optical properties;
Study of epitaxial lateral overgrowth of semipolar (1 1 − 2 2) GaN by using different SiO2 pattern sizes
Keywords: B. رشد اپیتاشیال; A. Nitrides; B. Epitaxial growth; C. X-ray diffraction; D. Defects
Nanoindentation analysis of the pop-in events on SiGe single layer
Keywords: B. رشد اپیتاشیال; A. Thin films; B. Epitaxial growth; B. Vapour deposition; D. Crystal structure;
Nanostructured columnar heterostructures of TiO2 and Cu2O enabled by a thin-film self-assembly approach: Potential for photovoltaics
Keywords: B. رشد اپیتاشیال; A. Nanostructures; A. Thin films; B. Sputtering; B. Epitaxial growth; D. Microstructure
Optical spectroscopy of Ce3+ ions in Gd3(AlxGa1âx)5O12 epitaxial films
Keywords: B. رشد اپیتاشیال; A. Thin films; A. Oxides; B. Epitaxial growth; D. Luminescence; D. Optical properties;
Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H−) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectors
Keywords: B. رشد اپیتاشیال; A. Semiconductors; B. Epitaxial growth; C. Atomic force microscopy; D. Optical properties; D. Electrical properties
Hopping energy and percolation-type transport in p-GaAs low densities near the 2D metal–insulator transition at zero magnetic field
Keywords: B. رشد اپیتاشیال; A. Quantum wells; A. Semiconductors; B. Epitaxial growth; D. Electrical conductivity; D. Transport properties
Shape transition of endotaxial islands growth from kinetically constrained to equilibrium regimes
Keywords: B. رشد اپیتاشیال; A. Nanostructure; A. Interfaces; B. Epitaxial growth; C. Electron microscopy; D. Microstructure
Carbon molecular beam epitaxy on various semiconductor substrates
Keywords: B. رشد اپیتاشیال; A. Thin films; B. Epitaxial growth; C. Atomic force microscopy; C. Raman spectroscopy; D. Microstructure
Tunable electroluminescence from n-ZnCdO/p-GaN heterojunction
Keywords: B. رشد اپیتاشیال; A. Thin films; B. Epitaxial growth; D. Optical properties;
Epitaxial growth of non-polar m-plane ZnO thin films by pulsed laser deposition
Keywords: B. رشد اپیتاشیال; A. Thin films; B. Epitaxial growth; C. X-ray diffraction; D. Crystal structure
Growth and characterization of periodically polarity-inverted ZnO structures on sapphire substrates
Keywords: B. رشد اپیتاشیال; 81.05.Ea; 81.15.Gh; 78.55.CrA. Semiconductor; A. Thin films; B. Epitaxial growth; C. Atomic force microscopy
Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with InxAl1−xSb continuously graded buffer
Keywords: B. رشد اپیتاشیال; A. Semiconductors; A. Thin films; B. Epitaxial growth; D. Defects; D. Electrical properties
The epitaxial growth of (1 1 1) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lattice matching interface
Keywords: B. رشد اپیتاشیال; A. Semiconductors; A. Interfaces; B. Epitaxial growth; C. Electron microscopy; D. Crystal structure
Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE
Keywords: B. رشد اپیتاشیال; A. Nitrides; B. Epitaxial growth; D. Luminescence
Endoepitaxial growth of hexagonal-Fe13Ge8 islands on Cubic-Ge(001)
Keywords: B. رشد اپیتاشیال; A. Nanostructure; A. Interfaces; B. Epitaxial growth; C. Electron microscopy; D. Diffusion;
Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy
Keywords: B. رشد اپیتاشیال; A. Nitrides; B. Epitaxial growth; C. Raman spectroscopy; D. Magnetic properties; D. Optical properties
Oxygen plasma power dependence on ZnO grown on porous silicon substrates by plasma-assisted molecular beam epitaxy
Keywords: B. رشد اپیتاشیال; A. Thin films; B. Epitaxial growth; B. Plasma deposition; C. X-ray diffraction; D. Optical properties
Epitaxial growth and interface strain coupling effects in manganite film/piezoelectric-crystal multiferroic heterostructures
Keywords: B. رشد اپیتاشیال; A. Thin film; B. Epitaxial growth; C. Electronic characterisation; D. Transport properties
Comparison of luminescence properties of bilayer and multilayer InAs/GaAs quantum dots
Keywords: B. رشد اپیتاشیال; A. Semiconductors; B. Epitaxial growth; D. Optical properties
Field-dependent anomalies in the thermodynamic and transport properties of RuSr2GdCu2O8-Evidence for a spin-flop transition
Keywords: B. رشد اپیتاشیال; A. Superconductors; B. Epitaxial growth; D. Electrical properties; D. Magnetic properties; D. Specific heat;
A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping
Keywords: B. رشد اپیتاشیال; A. Nanostructures; A. Semiconductors; B. Epitaxial growth; C. X-ray diffraction; D. Optical properties
Temperature dependent photoluminescence investigation of the effect of growth pause induced ripening in InAs/GaAs quantum dot heterostructures
Keywords: B. رشد اپیتاشیال; A. Semiconductors; B. Epitaxial growth; C. Electron microscopy; D. Optical properties
The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAs
Keywords: B. رشد اپیتاشیال; A. Semiconductors; B. Epitaxial growth; C. Electron microscopy; D. Optical properties
Impact of the crystallographic structure of epitaxially grown strained sodium–bismuth–titanate thin films on local piezo- and ferroelectric properties
Keywords: B. رشد اپیتاشیال; A. Oxides; A. Thin films; B. Epitaxial growth; D. Ferroelectricity; D. Piezoelectricity
Vanadium oxide nanodisks: Synthesis, characterization, and electrochemical properties
Keywords: B. رشد اپیتاشیال; A. Nanostructures; A. Oxides; B. Chemical synthesis; B. Epitaxial growth; D. Electrochemical properties
Influence of sintering conditions in the preparation of acetate-based fluorine-free CSD YBCO films using a direct sintering method
Keywords: B. رشد اپیتاشیال; A. Superconductors; B. Epitaxial growth; B. Sol–gel chemistry; D. Superconductivity
In situ observation of self-assembled Fe13Ge8 nanowires growth on anisotropic Ge (1 1 0) surface
Keywords: B. رشد اپیتاشیال; A. Nanostructures; A. Semiconductors; B. Epitaxial growth; C. Electron microscopy; C. Electron diffraction
Effect of gas flow rate on surface morphology and crystal quality of ZnTe epilayers grown on GaAs substrates
Keywords: B. رشد اپیتاشیال; A. Semiconductor; B. Epitaxial growth; C. Atomic force microscopy; D. Luminescence
Growth process and microwave absorption properties of nanostructured γ-MnO2 urchins
Keywords: B. رشد اپیتاشیال; A. Nanostructures; A. Oxides; B. Epitaxial growth; D. Dielectric properties; Scanning electron microscopy;
Growth of nonpolar m-plane GaN (1 0 −1 0) single crystal on (1 0 0) LiAlO2 substrate by a newly designed hydride vapor phase epitaxy
Keywords: B. رشد اپیتاشیال; A. Nitrides; B. Epitaxial growth; C. Electron microscopy; D. Optical properties
Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate
Keywords: B. رشد اپیتاشیال; A. Semiconductors; B. Epitaxial growth; C. Atomic force microscopy; D. Crystal structure