کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1487513 | 1510703 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlOx interlayer
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlOx interlayer High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlOx interlayer](/preview/png/1487513.png)
چکیده انگلیسی
High (1 1 1) orientation poly-Ge film was fabricated by Al induced crystallization (AIC), where Al and amorphous Ge (a-Ge) layers were continuously deposited by magnetron sputtering, avoiding the deliberate introduction of an AlOx interlayer. To improve the quality of poly-Ge film, the ratio of thicknesses of Al and a-Ge was adjusted. Electron backscattered diffraction (EBSD) results revealed that the (1 1 1) fraction of poly-Ge film reached 97% and the average crystal grain size surpassed 100 μm.
Figure optionsDownload as PowerPoint slide
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 72, December 2015, Pages 60–63
Journal: Materials Research Bulletin - Volume 72, December 2015, Pages 60–63
نویسندگان
Peng Wang, Xin Li, Hanhui Liu, Shumei Lai, Yuye Chen, Yihong Xu, Songyan Chen, Cheng Li, Wei Huang, Dingliang Tang,