High nitrogen composition-induced low interfacial roughness of GaAs0.978N0.022/GaAs multiple quantum wells grown through solid-source molecular beam epitaxy

High nitrogen composition-induced low interfacial roughness of GaAs0.978N0.022/GaAs multiple quantum wells grown through solid-source molecular beam epitaxy

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 88, April 2017, Pages 242-247

Mahitosh Biswas, Binita Tongbram, Nilesh Shinde, Roshan Lal Makkar, Anuj Bhatnagar, Subhananda Chakrabarti,