کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1488808 992296 2013 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Shape transition of endotaxial islands growth from kinetically constrained to equilibrium regimes
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Shape transition of endotaxial islands growth from kinetically constrained to equilibrium regimes
چکیده انگلیسی


• All Fe13Ge8 islands will grow into Ge(0 0 1) substrate at temperatures from 350 to 675 °C.
• Shape transition occurred from kinetically constrained to equilibrium regime.
• All endotaxial islands can be clarified into two types.
• The mechanisms of endotaxial growth and shape transition have been rationalized.

A comprehensive study of Fe grown on Ge(0 0 1) substrates has been conducted at elevated temperatures, ranging from 350 to 675 °C. All iron germinide islands, with the same Fe13Ge8 phase, grow into the Ge substrate with the same epitaxial relationship. Shape transition occurs from small square islands (low temperatures), to elongated orthogonal islands or orthogonal nanowires (intermediate temperatures), and then finally to large square orthogonal islands (high temperatures). According to both transmission electron microscopy (TEM) and atomic force microscopy (AFM) investigations, all islands can be defined as either type-I or type-II. Type-I islands usually form at kinetically constrained growth regimes, like truncated pyramids. Type-II islands usually appear at equilibrium growth regimes forming a dome-like shape. Based on a simple semi-quantitative model, type-II islands have a lower total energy per volume than type-I, which is considered as the dominant mechanism for this type of shape transition. Moreover, this study not only elucidates details of endotaxial growth in the Fe–Ge system, but also suggests the possibility of controlled fabrication of temperature-dependent nanostructures, especially in materials with dissimilar crystal structures.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 48, Issue 9, September 2013, Pages 2998–3008
نویسندگان
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