کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1792633 1023653 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth of nonpolar m-plane GaN (1 0 −1 0) single crystal on (1 0 0) LiAlO2 substrate by a newly designed hydride vapor phase epitaxy
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Growth of nonpolar m-plane GaN (1 0 −1 0) single crystal on (1 0 0) LiAlO2 substrate by a newly designed hydride vapor phase epitaxy
چکیده انگلیسی

A newly designed two-step reactor which places both chemical vapor deposition (CVD) and hydride vapor phase epitaxy (HVPE) in series is proposed to grow nonpolar m-plane GaN (1 0 −1 0) material on a closely lattice-matched (1 0 0) LiAlO2 single crystal substrate. The surface morphologies are characterized by scanning electron microscopy. Structural properties of the GaN epilayers are investigated by X-ray diffraction, and the FWHM of GaN (1 0 −1 0) rocking curve is around 0.13°. Optical and electrical properties are evaluated by photoluminescence spectroscopy, optical transmission spectra and Hall measurement. Photoluminescence spectroscopy exhibited a near band edge emission peak at 3.410 eV. The carrier concentration is (3.9±0.01)×1018 cm−3.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 316, Issue 1, 1 February 2011, Pages 6–9
نویسندگان
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