کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1792633 | 1023653 | 2011 | 4 صفحه PDF | دانلود رایگان |

A newly designed two-step reactor which places both chemical vapor deposition (CVD) and hydride vapor phase epitaxy (HVPE) in series is proposed to grow nonpolar m-plane GaN (1 0 −1 0) material on a closely lattice-matched (1 0 0) LiAlO2 single crystal substrate. The surface morphologies are characterized by scanning electron microscopy. Structural properties of the GaN epilayers are investigated by X-ray diffraction, and the FWHM of GaN (1 0 −1 0) rocking curve is around 0.13°. Optical and electrical properties are evaluated by photoluminescence spectroscopy, optical transmission spectra and Hall measurement. Photoluminescence spectroscopy exhibited a near band edge emission peak at 3.410 eV. The carrier concentration is (3.9±0.01)×1018 cm−3.
Journal: Journal of Crystal Growth - Volume 316, Issue 1, 1 February 2011, Pages 6–9