کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1486865 1510691 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhancement in multicolor photoresponse for quaternary capped In0.5Ga0.5As/GaAs quantum dot infrared photodetectors implanted with hydrogen ions
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Enhancement in multicolor photoresponse for quaternary capped In0.5Ga0.5As/GaAs quantum dot infrared photodetectors implanted with hydrogen ions
چکیده انگلیسی


• QDIP characteristics are enhanced by hydrogen implantations.
• The field-assisted tunneling process of dark current generation was suppressed.
• A stronger multicolor photo-response was obtained for implanted devices.
• The proposed device model explains the improved QDIPs performance.

In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs) are among the most efficient devices in the mid-wavelength infrared and long-wavelength infrared regions for various defense and space application purposes. Considering the importance of the results reported so far on In(Ga)As/GaAs QDIPs, here we had tried to develop a post-growth method for enhancing QDIP characteristics using both low energy and high energy light ion (hydrogen) implantations. The field-assisted tunneling process of dark current generation was suppressed due to the hydrogen ion implantation, even at a very high operational bias. A stronger multicolor photo-response was obtained for devices implanted with low energy hydrogen ions. From experimental results, we proposed a device model which explains the improved QDIPs performance caused by hydrogen ion implantation.

(a) Proposed models showing the conduction band edge of QDs based detectors before implantation.(b) Proposed models showing the conduction band edge of QDs based detectors after implantation.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 84, December 2016, Pages 79–84
نویسندگان
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