Influence of stacking faults on the quality of GaN films grown on sapphire substrate using a sputtered AlN nucleation layer

Influence of stacking faults on the quality of GaN films grown on sapphire substrate using a sputtered AlN nucleation layer

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 89, May 2017, Pages 193-196

Zhibin Chen, Jincheng Zhang, Shengrui Xu, Junshuai Xue, Teng Jiang, Yue Hao,