Optical spectroscopy of Ce3+ ions in Gd3(AlxGa1−x)5O12 epitaxial films

- Films of Ce-doped Gd3(AlxGa1−x)5O12 were grown using liquid-phase epitaxy method.
- The emission of Ce3+ is observed only when Al3+ ions are incorporated into the films.
- Gradual shift of Ce3+ levels into the bandgap occurs with the increase of x value.
- The garnet's bandgap energy rises with increasing Al3+ concentration.