کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1489756 | 992312 | 2012 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: The epitaxial growth of (1 1 1) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lattice matching interface The epitaxial growth of (1 1 1) oriented monocrystalline Si film based on a 4:5 Si-to-SiC atomic lattice matching interface](/preview/png/1489756.png)
Due to a huge lattice mismatch of about 20% theoretically existing between SiC and Si, it is difficult for growing monocrystalline Si/SiC heterojunction to realize the light control of SiC devices. However, based on a 4:5 Si-to-SiC atomic lattice matching interface structure, the monocrystalline Si films were epitaxially prepared on the 6H-SiC (0 0 0 1) substrate by hot-wall chemical vapor deposition in our work. The film was characterized by X-ray diffraction analysis with only (1 1 1) orientation occurring. The X-ray rocking curves illustrated good symmetry with a full width at half maximum of 0.4339° omega. A 4:5 Si-to-SiC atomic matching structure of the Si/6H-SiC interface clearly observed by the transmission electron microscope revealed the essence of growing the monocrystalline Si film on the SiC substrate.
Figure optionsDownload as PowerPoint slideHighlights
► A monocrystalline Si film was demonstrated by XRD to epitaxially grow on the 6H-SiC substrate.
► A 4:5 Si-to-SiC lattice matching structure was observed at the Si/SiC interface.
► The calculated value of the actual lattice mismatch is only 0.26%.
► Defects can be effectively reduced at the 4:5 Si-to-SiC lattice matching Si/SiC interface.
Journal: Materials Research Bulletin - Volume 47, Issue 6, June 2012, Pages 1331–1334