کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1518807 | 1511626 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of pulse plated GaAs films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thin GaAs films were prepared by pulse plating from an aqueous solution containing 0.20Â M GaCl3 and 0.15Â M As2O3 at a pH of 2 and at room temperature. The current density was kept as 50Â mAÂ cmâ2 the duty cycle was varied in the range 10-50%. The films were deposited on titanium, nickel and tin oxide coated glass substrates. Films exhibited polycrystalline nature with peaks corresponding to single phase GaAs. Optical absorption measurements indicated a direct band gap of 1.40Â eV. Photoelectrochemical cells were made using the films as photoelectrodes and graphite as counter electrode in 1Â M polysulphide electrolyte. At 60Â mWÂ cmâ2 illumination, an open circuit voltage of 0.5Â V and a short circuit current density of 5.0Â mAÂ cmâ2 were observed for the films deposited at a duty cycle of 50%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 67, Issue 7, July 2006, Pages 1432-1435
Journal: Journal of Physics and Chemistry of Solids - Volume 67, Issue 7, July 2006, Pages 1432-1435
نویسندگان
K.R. Murali, D.C. Trivedi,