کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1519220 1511623 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Pressure dependence of the near-band-edge photoluminescence from ZnO microrods at low temperature
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Pressure dependence of the near-band-edge photoluminescence from ZnO microrods at low temperature
چکیده انگلیسی
The temperature and pressure dependences of band-edge photoluminescence from ZnO microrods have been investigated. The energy separation between the free exciton (FX) and its first order phonon replica (FX-1LO) decreases at a rate of kBT with increasing temperature. The intensity ratio of the FX-1LO to the bound exciton (BX) emission is found to decrease slightly with increasing pressure. All of the exciton emission peaks show a blue shift with increasing pressure. The pressure coefficient of the FX transition, longitudinal optical (LO) phonon energy, and binding energy of BX are estimated to be 21.4, 0.5, and 0.9 meV/GPa, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 67, Issue 11, November 2006, Pages 2376-2381
نویسندگان
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