|کد مقاله||کد نشریه||سال انتشار||مقاله انگلیسی||ترجمه فارسی||نسخه تمام متن|
|1520589||1511786||2016||7 صفحه PDF||سفارش دهید||دانلود رایگان|
• FTIR technique was successfully utilized for in-situ gas analysis.
• Quantitative analysis of exhaust gas in GaN growth process revealed the growth window.
• HCN synthesis established and optimized for purpose of Ga chemical vapor transport.
FTIR exhaust gas analysis is used to establish chemical reactions paths in chemical vapor growth of GaN single crystals. The growth process utilizes the classical Degussa process on a lab scale to synthesize HCN as a transport agent for Ga. With GaCN as Ga and C precursor, the process is very similar to halide vapor phase epitaxy (HVPE), where GaCl is the Ga precursor and in both methods, the source of reactive nitrogen is NH3. Spectra are presented for the pure HCN synthesis and its combination with vapor growth, allowing the effective optimization of growth parameters, especially of gas flows.
Journal: Materials Chemistry and Physics - Volume 177, 1 July 2016, Pages 12–18