Optoelectronic properties of higher acenes, their BN analogue and substituted derivatives

• Optoelectronic properties of structures based on higher acenes have been investigated.
• Oxidation and reduction potentials together with reorganization energies are calculated.
• TADF is analyzed through calculation of ΔE(S1−T1), which is much better for BN analogues.
• Reorganization energies of acenes improve with the increase of number of benzene rings.

We have investigated optoelectronic properties of higher acenes: pentacene, hexacene, heptacene, octacene, nonacene, decacene and their boron-nitride (BN) analogues, within the framework of density functional theory (DFT). We have also investigated the optoelectronic properties of acenes modified by BN substitution. Calculated optoelectronic properties encompasses: oxidation and reduction potentials, electron and hole reorganization energies and energy difference between excited first singlet and triplet states ΔE(S1−T1). Oxidation and reduction potentials indicate significantly better stability of BN analogues, comparing with their all-carbon relatives. Although higher acenes possess lower electron and hole reorganization energies, with both best values much lower than 0.1 eV, their BN analogues also have competitive values of reorganization energies, especially for holes for which reorganization energy is also lower than 0.1 eV. On the other hand ΔE(S1−T1) is much better for BN analogues, having values that indicate that BN analogues are possible applicable for thermally activated delayed fluorescence.