کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1521368 | 1511806 | 2015 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Theoretical studies of optoelectronic and mechanical properties of GaPxSb1âx alloys under the effect of temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Optical and mechanical properties of GaPxSb1âx alloy have been carried out for various phosphorus concentrations. The temperature dependence of energy band gaps, refractive index, high frequency dielectric constant, elastic parameters and their related properties has been investigated. Our calculations have been made with the empirical pseudo-potential method (EPM) coupled with the virtual crystal approximation (VCA) included the compositional disorder effect. There is an excellent agreement between our calculated results and the available experimental data for the binary compounds GaP and GaSb which is a support for those of the ternary alloys. The considered alloy could be used in the electronic devices under high temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 157, 1 May 2015, Pages 108-115
Journal: Materials Chemistry and Physics - Volume 157, 1 May 2015, Pages 108-115
نویسندگان
Abdel R. Degheidy, Elkenany B. Elkenany,