Quantitative correlation between air induced changes of electronic parameters and morphological features of copper phthalocyanine thin film surfaces

In this work, utilizing fine-resolved photoemission yield spectroscopy (PYS) method, the set of electronic parameters of the space charge layer of 16 nm-copper phthalocyanine (CuPc) thin films deposited on n-type Si(111) substrate covered with modified SiO2 was determined after long term air exposure. The PYS investigation revealed that work function and surface band bending increased upon gas adsorption by 0.64 eV and 0.32 eV respectively for organic layer and surface dipole effect appeared as the shift in electron affinity of 0.32 eV. Obtained results were compared with photoemission data received for corresponding CuPc films on different types of silicon Si(111) substrate. Collected parameters were correlated with the morphological features of the CuPc's surfaces measured applying atomic force microscopy (AFM) ability. Results of compiled PYS and AFM studies indicated particular electronic tendency for oxidation processes for certain shapes of phthalocyanine crystallites. It may suggest that by manipulation of the initial films' morphology it would be possible to control the air stability of the CuPc-based electronic devices and their vulnerability to degradation processes.