کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1521921 | 995301 | 2014 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of ultrathin Al2O3 gate oxide deposited by RF-magnetron sputtering on gallium nitride epilayer on sapphire substrate
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A systematic study was performed on Al2O3 films RF-magnetron sputtered on GaN substrate and subjected to different post-deposition annealing (PDA) temperatures (200-800 °C) in oxygen ambient. The as-deposited Al2O3 film and Al2O3 films subjected to PDA at 200 and 400 °C were present in amorphous phase and therefore undetectable by X-ray diffraction. By further enhancing the PDA temperature (â¥600 °C), a transformation from amorphous to polycrystalline phase of Al2O3 happened. The increment of PDA temperature has contributed to an enhancement in leakage current density-electric field (J-E) characteristics of the investigated samples. A correlation between the acquired J-E characteristics with effective oxide charge, slow trap density, interface trap density, and total interface trap density were discussed. A detailed investigation on the conduction of charges through the as-deposited Al2O3 gate and Al2O3 gates subjected to different PDA temperatures via space-charge-limited conduction, Schottky emission, Poole-Frenkel emission, and Fowler-Nordheim tunneling were presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 148, Issue 3, 15 December 2014, Pages 592-604
Journal: Materials Chemistry and Physics - Volume 148, Issue 3, 15 December 2014, Pages 592-604
نویسندگان
Hock Jin Quah, Kuan Yew Cheong,