Acceptor related photoluminescence and field emission of ZnO:P nanostructures

• Acceptor-related PL was observed of ZnO:P nanostructures.
• Strenuous vibration of Zn vacancy and its replica.
• Discussed the FE behaviors of ZnO:P nanostructures.

ZnO:P nanobelts were self-assembly synthesized by thermal evaporation of Zn power and P2O5 mixture. The temperature dependence photoluminescence of ZnO:P nanostructures was studied from 81 to 291 K. As the temperature increased from 81 to 111 K, the PL intensity of DAP emission was obviously enhanced. The abnormal PL intensities were ascribed to the acceptor vibration with local phonon and lattice phonon assistant. The PL of zinc vacancy and its replica were well resolved due to the strenuous vibration of Zn vacancy. The replica of zinc vacancy emission increased while the visible emission gradually decreased with the temperature increase. It suggested that there were intensive deep acceptor vibration. The field emission properties of the ZnO:P nanostructures have been investigated according to the acceptor-related PL spectra. The influence of space charge effect on the field emission behaviors was also discussed.