Effects of growth conditions on the acceptor activation of Mg-doped p-GaN

► High activation efficiency of 5% and smooth surface with Rrms of 0.72 nm was achieved in p-GaN films. ► Low density of MgGa-VN complexes and screw-type dislocations in the 50 mbar growth of p-GaN films. ► The acceptor activation energy and the compensation ratio were ∼151 meV and ∼10%, respectively.