Influence of substrate temperature on structural, optical, and electrical properties of flash evaporated CuIn0.81Al0.19Se2 thin films

► CuInAlSe2 (CIAS) thin films deposited using flash evaporation at different substrate temperatures. ► XRD shows single phase, polycrystalline in nature of CIAS thin films and the surface with the dense grains observed by SEM. ► Optical band gap is in the range of 1.20 eV-1.38 eV and the absorption coefficient is close to 105 cm−1. ► Electrical characterization reveals p-type conductivity with good carrier mobility of ∼10 cm2 V s−1. ► Observed properties indicates potential use of CIAS thin films as an absorber layer in thin film solar cell.