Surface phonon polariton of wurtzite AlN thin film grown on sapphire

Polarized infrared attenuated total reflection (ATR) with Otto configuration was employed to access the surface phonon polariton (SPP) characteristics of wurtzite aluminium nitride (AlN) thin film grown on sapphire (Al2O3) substrate. The surface and guided wave polariton dispersion curves for the studied structure were derived by taking into account thin film and substrate anisotropy. From the p-polarized ATR spectrum, one prominent peak corresponds to the SPP mode of AlN thin film was clearly observed at 824 cm−1. In addition, four guided wave modes were also detected at 467, 593.5, 633.5 and 668 cm−1. For the s-polarized ATR spectrum, five pronounced dips associated to the guided wave modes were detected. The obtained results were in good agreement with the ATR spectra calculated based on the standard transfer matrix formulation. The origin of the observed ATR dips were verified from the dispersion curves simulated based on air/AlN epilayer/AlN buffer layer/Al2O3 model.

► Experimental and theoretical studies on surface phonon polariton characteristics of AlN on sapphire are reported.
► Polarized attenuated total reflection with Otto configuration technique is employed.
► Surface polariton dispersion relation is derived based on anisotropy model.
► AlN on sapphire exhibits one surface phonon polariton and four guided wave polariton modes.