Estimation of oxide related electron trap energy of porous silicon nanostructures

Estimation of electron trap energy (Et), with respect to bulk Si valence band, of oxidized porous silicon (PS) nanostructures is reported. Photoluminescence (PL) spectra of oxidized PS prepared with different formation parameters have been investigated and the room temperature PL characteristics have been successfully explained on the basis of oxide related trap assisted transitions. PL peak energy for the oxidized samples with low porosity exhibited a blue shift with increasing formation current density (J). For the high porosity samples double peaks appeared in the PL spectra. One of these peaks remained constant at ∼730 nm while the other was blue shifted with increase in J. Evolution of PS nanostructure was correlated to the formation parameters using a simple growth mechanism. PS nanostructure was modelled as an array of regular hexagonal pores and the average value of Et was estimated to be 1.67 eV.