کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1525656 995359 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Luminescence of Eu3+-activated tetra-molybdate red phosphors and their application in near-UV InGaN-based LEDs
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Luminescence of Eu3+-activated tetra-molybdate red phosphors and their application in near-UV InGaN-based LEDs
چکیده انگلیسی

A series of Eu3+-activated tetra-molybdate phosphors BaGd2−xEux(MoO4)4 have been prepared by a solid-state reaction route. The photoluminescent properties of the phosphors were measured at room temperature. Photoluminescence of the phosphors under near UV excitation was enhanced by partial substitution of Mo6+ with W6+ or by co-doping other trivalent ions in BaGd2(MoO4)4:Eu3+. The luminescence of BaGd2[(Mo,W)O4]4:Eu3+ and BaGd2(MoO4)4:Eu3+,A3+ (A3+ = Y3+, Yb3+, and Lu3+) were compared with that of a conventional red phosphor Y2O2S:0.05Eu3+. The results show that sample BaGd1.2Eu0.8(WO4)0.4(MoO4)3.6 exhibits the strongest red emission under near-UV excitation. An intense red light-emitting diode (LED) was fabricated by combining this phosphor with a ∼395 nm-emitting InGaN chip, and the good performance of the LED demonstrates that the phosphor may be a suitable red component for application in near-UV InGaN chip-based white-light-emitting diodes.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 118, Issue 1, 15 November 2009, Pages 76–80
نویسندگان
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