کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1526522 995371 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Semiconductor parameters of Bi2Te3 single crystal
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Semiconductor parameters of Bi2Te3 single crystal
چکیده انگلیسی

Single crystals of Bi2Te3 were prepared by a modified Bridgman method. The as-prepared Bi2Te3 was investigated by X-ray diffraction (XRD). Anisotropic phenomena in the layered Bi2Te3 crystal was investigated. The measurements showed that the electrical conductivity, Hall mobility and Seebeck coefficient (TEP) have anisotropic nature. From these measurements type of conduction and several physical parameters such as diffusion coefficients, diffusion lengths, and effective masses of carriers were estimated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 113, Issue 1, 15 January 2009, Pages 385–388
نویسندگان
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