کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1526583 1511845 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Epitaxial growth of faceted SiC single-crystal nanoparticles using a carbon nanocapsule as a reacting template
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Epitaxial growth of faceted SiC single-crystal nanoparticles using a carbon nanocapsule as a reacting template
چکیده انگلیسی

In this study, the faceted SiC nanoparticles displaying a unified faceted angle have been synthesized using a CNC (carbon nanocapsule) as a reacting template. A possible new reaction between SiO(g) and graphene, 2SiO(g) + C(s) → SiC(s) + SiO2(g), was found. A growth model was proposed to elucidate the growth of the faceted SiC nanoparticles. It was found that the match of the graphene (0 0 2) plane of the CNC caused the growth of SiC nanoparticles to be initiated by the SiC {2 20 } planes. The faceted angle of SiC nanoparticles was a result of the intersection angle of the {1 1 1} planes.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 116, Issues 2–3, 15 August 2009, Pages 497–502
نویسندگان
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