کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1526777 995375 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Bulk growth of 〈1 0 1〉 KDP crystal by Sankaranarayanan–Ramasamy method and its characterization
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Bulk growth of 〈1 0 1〉 KDP crystal by Sankaranarayanan–Ramasamy method and its characterization
چکیده انگلیسی

Unidirectional 〈1 0 1〉 potassium dihydrogen orthophosphate (KDP) single crystal was grown for the first time by Sankaranarayanan–Ramasamy (SR) method. The 〈1 0 1〉 oriented plate was mounted as seed at the bottom of the glass ampoule and the crystal of 30 mm diameter, 55 mm height was grown. The grown crystals were characterized by UV–vis spectroscopy, microhardness, dielectric and etching studies. The SR method grown KDP has higher transmittance compared to conventional method grown crystals. The crystals grown by SR method have much higher hardness value than conventional method grown crystals. The dielectric constant was higher and the dielectric loss was less in SR method grown crystal as against conventional method grown crystal.Dislocation density is less in SR method grown KDP compared to conventional method grown KDP.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 112, Issue 1, 15 November 2008, Pages 1–4
نویسندگان
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