Effect of oxygen partial pressure on properties of Nb-doped In2O3 thin films

Nb-doped In2O3 thin films were deposited by pulsed laser deposition technique. The effect of oxygen partial pressure on electrical, structural and optical properties was studied. The conductivity, carrier concentration and mobility of the films decrease with increase in the oxygen pressure after attaining maximum. Low resistivity (9.61 × 10−5 Ω cm) and high mobility (65 cm2 V−1 s−1) is observed for the film grown under oxygen pressure of 1.0 × 10−3 mbar. The average transmittance of the films is more than 85%. The optical band gap is found varying between 4.09 and 4.23 eV for various oxygen pressure.