کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1526950 | 1511850 | 2008 | 8 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Oriented growth of silicide and carbon in SiC-based sandwich structures with nickel Oriented growth of silicide and carbon in SiC-based sandwich structures with nickel](/preview/png/1526950.png)
We report on the formation kinetics and the metal-mediated structuring in nanoregions of silicide and carbon containing interlayers in SiC-based materials. The silicide formation and the graphite texturisation are determined by complex reactive diffusion processes. High resolution and analytical electron microscopy evidenced a δ-Ni2Si growth with a 〈5 0 6〉 fibre texture in parallel orientation to the 〈0 0 0 1〉 direction of the SiC substrate. The oriented growth of graphitic regions in the silicide hints to a diffusion controlled carbon precipitation from the silicide supersaturated with carbon, explaining the observed orientation relationships between graphite and silicon carbide: perpendicular and parallel to the {0 0 0 1} silicon carbide surfaces.
Journal: Materials Chemistry and Physics - Volume 110, Issues 2–3, 15 August 2008, Pages 303–310