کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1526995 | 1511853 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Substitutional position and insulator-to-metal transition in Nb-doped SrTiO3
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Electronic and structural properties of Nb-doped SrTiO3 are studied using the first principles density functional theory (DFT) calculations based on a plane–wave basis and pseudopotentials. Dopant formation energy, structure distortion, band structure as well as density of states have been obtained. Dopant formation energy results show that Nb preferentially enters the Ti site in SrTiO3, which is good agreement with experimental observations. The Fermi level of the Nb-doped SrTiO3 move into the bottom of conduction band, and the system undergoes an insulator-to-metal transition. Due to the appearance of the carrier impurity from Nb doping, there is a significant distortion on the top valence band.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 107, Issues 2–3, 15 February 2008, Pages 215–219
Journal: Materials Chemistry and Physics - Volume 107, Issues 2–3, 15 February 2008, Pages 215–219
نویسندگان
C. Zhang, C.L. Wang, J.C. Li, K. Yang, Y.F. Zhang, Q.Z. Wu,