Microwave dielectric properties of doped Zn3Nb2O8 ceramics sintered below 950 °C and their compatibility with silver electrode

Zn3Nb2O8 has been considered as candidate microwave materials due to its high quality factor. However, Zn3Nb2O8 has to be sintered above 1200 °C. We have lowered Zn3Nb2O8 sintering temperature to 950 °C by using 3 wt.% of BC additives (0.29BaCO3–0.71CuO). The doped Zn3Nb2O8 exhibits good microwave properties at 8.3 GHz (k = 14.7, Q × f = 8200 GHz). The interfacial behavior between Zn3Nb2O8 dielectric and silver was investigated by using X-ray diffractometer, scanning electronic microscope, and electronic probe microanalyzer. No new crystalline phase and no silver migration behavior were found after cofiring doped Zn3Nb2O8 and silver electrode at 950 °C for 4 h. The low sintering temperature BC doped Zn3Nb2O8 with high Q × f value has a potential for microwave applications.